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BUZ110S Просмотр технического описания (PDF) - Siemens AG

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BUZ110S SIPMOS® Power Transistor Siemens
Siemens AG Siemens
BUZ110S Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
• also in SMD available
Type
BUZ 110 S
VDS
55 V
ID
80 A
BUZ 110 S
SPP80N05
Pin 1
G
Pin 2
D
Pin 3
S
RDS(on)
0.012
Package
TO-220 AB
Ordering Code
Q67040-S4005-A2
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 80 A, VDD = 25 V, RGS = 25
L = 144 µH, Tj = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Reverse diode dv/dt
IS = 80 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Symbol
ID
IDpuls
EAS
IAR
EAR
dv/dt
VGS
Ptot
Values
80
66
320
460
80
20
6
± 20
200
Unit
A
mJ
A
mJ
kV/µs
V
W
Semiconductor Group
1
28/Jan/1998
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