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BUZ104S View Datasheet(PDF) - Siemens AG

Part Name
Description
Manufacturer
BUZ104S
Siemens
Siemens AG Siemens
BUZ104S Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BUZ 104 S
SPP14N05
Drain-source on-resistance
RDS (on) = Æ’(Tj)
parameter: ID = 9.6 A, VGS = 10 V
0.32
Ω
RDS (on)
0.24
0.20
0.16
98%
0.12
typ
0.08
0.04
0.00
-60
-20
20
60 100 °C 180
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 3
Gate threshold voltage
VGS(th)= f (Tj)
parameter:VGS=VDS, ID =20µA
5.0
V
4.4
VGS(th) 4.0
3.6
3.2
2.8
2.4
max
2.0
1.6
typ
1.2
0.8
0.4
min
0.0
-60 -20 20 60 100 140 V 200
Tj
Forward characteristics of reverse diode
IF = Æ’(VSD)
parameter: Tj, tp = 80 µs
10 2
C
pF
A
I
F
Ciss
10 1
10 2
Coss
Crss
10 1
0
5 10 15 20 25 30 V 40
VDS
Semiconductor Group
7
10 0
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 -1
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
29/Jan/1998
 

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