BUZ 103 SL
SPP28N05L
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
VDS≥ 2 * ID * RDS(on)max, ID = 20 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 4.5 V, ID = 28 A
RG = 6.8 Ω
Rise time
VDD = 30 V, VGS = 4.5 V, ID = 28 A
RG = 6.8 Ω
Turn-off delay time
VDD = 30 V, VGS = 4.5 V, ID = 28 A
RG = 6.8 Ω
Fall time
VDD = 30 V, VGS = 4.5 V, ID = 28 A
RG = 6.8 Ω
Gate charge at threshold
VDD = 40 V, ID = 0.1 A, VGS =0 to 1 V
Gate charge at 5.0 V
VDD = 40 V, ID = 28 A, VGS =0 to 5 V
Gate charge total
VDD = 40 V, ID = 28 A, VGS =0 to 10 V
Gate plateau voltage
VDD = 40 V, ID = 28 A
Semiconductor Group
gfs
10
Ciss
-
Coss
-
Crss
-
td(on)
-
tr
-
td(off)
-
tf
-
Qg(th)
-
Qg(5)
-
Qg(total)
-
V(plateau)
-
3
Values
Unit
typ.
max.
S
-
-
pF
770
960
230
300
130
165
ns
10
15
75
115
30
45
20
30
nC
1
1.5
20
30
32
50
V
4
-
30/Jan/1998