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BUZ103AL View Datasheet(PDF) - Siemens AG

Part Name
Description
Manufacturer
BUZ103AL
Siemens
Siemens AG Siemens
BUZ103AL Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BUZ 103AL
Avalanche energy EAS = Æ’(Tj)
parameter: ID = 35 A, VDD = 25 V
RGS = 25 Ω, L = 81 µH
110
mJ
EAS 90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 °C 180
Tj
Drain-source breakdown voltage
V(BR)DSS = Æ’(Tj)
Typ. gate charge
VGS = Æ’(QGate)
parameter: ID puls = 52 A
16
V
VGS
12
10
8
0,2
V
DS
max
6
0,8
V
DS
max
4
2
0
0
10 20 30 40 50 nC 65
QGate
62
V
60
V(BR)DSS 59
58
57
56
55
54
53
52
51
50
49
48
47
-60 -20
20
60 100 °C 180
Tj
Semiconductor Group
8
07/96
 

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