Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
English
í•œêµì–´
日本語
руÑÑкий
简体ä¸æ–‡
español
Part Name
Description
BUZ103AL View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BUZ103AL
SIPMOS ® Power Transistor
Siemens AG
BUZ103AL Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
BUZ 103AL
Avalanche energy
E
AS
=
Æ’
(
T
j
)
parameter:
I
D
= 35 A,
V
DD
= 25 V
R
GS
= 25
Ω
,
L
= 81 µH
110
mJ
E
AS
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 °C 180
T
j
Drain-source breakdown voltage
V
(BR)DSS
=
Æ’
(
T
j
)
Typ. gate charge
V
GS
=
Æ’
(
Q
Gate
)
parameter:
I
D puls
= 52 A
16
V
V
GS
12
10
8
0,2
V
DS
max
6
0,8
V
DS
max
4
2
0
0
10 20 30 40 50 nC 65
Q
Gate
62
V
60
V
(BR)DSS
59
58
57
56
55
54
53
52
51
50
49
48
47
-60 -20
20
60 100 °C 180
T
j
Semiconductor Group
8
07/96
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]