BUZ102AL View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BUZ102AL Datasheet PDF : 9 Pages
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BUZ 102AL
Typ. output characteristics
ID = Æ’(VDS)
parameter: tp = 80 µs
100
Ptot = 200W
A
k
j
li
h
g
ID
80
70
60
50
40
30
20
f VGS [V]
a
2.0
b
2.5
c
3.0
ed
3.5
e
4.0
f
4.5
g
5.0
dh
5.5
i
6.0
j
7.0
k
8.0
cl
10.0
10
b
0
a
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
50
A
ID
40
35
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Drain-source on-resistance
RDS (on) = Æ’(Tj)
parameter: ID = 21 A, VGS = 5 V
0.080
Ω
RDS (on)
0.060
0.050
0.040
98%
0.030
typ
0.020
0.010
0.000
-60 -20
20
60 100 °C 180
Tj
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
45
S
gfs
35
30
25
20
15
10
5
0
0 5 10 15 20 25 30 35 A 45
ID
Semiconductor Group
6
07/96
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