BUZ101SL View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BUZ101SL Datasheet PDF : 8 Pages
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BUZ 101 SL
SPP20N05L
Avalanche energy EAS = f (Tj)
parameter:ID=20A,VDD =25 V
RGS =25 Ω , L = 450µH
100
mJ
EAS
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 °C 180
Tj
Drain-source breakdown voltage
V(BR)DSS = Æ’(Tj)
Typ. gate charge
VGS = Æ’(QGate)
parameter: ID puls = 20 A
16
V
VGS
12
10
8
0,2 VDS max
0,8 VDS max
6
4
2
0
0 4 8 12 16 20 24 28 nC 34
QGate
65
V
V
(BR)DSS
61
59
57
55
53
51
49
-60
-20
20
60 100 °C 180
Tj
Semiconductor Group
8
29/Jan/1998
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