BUZ101L View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BUZ101L

SIPMOS® Power Transistor

Siemens AG 

BUZ 101L

Typ. output characteristics

ID = ƒ(VDS)

parameter: tp = 80 µs

65

Ptot = 100W

A

k lj

i

55

ID

50

45

40

35

30

25

20

15

hVGS [V]

a 2.0

b 2.5

g c 3.0

d 3.5

e 4.0

f f 4.5

g 5.0

h 5.5

e

i 6.0

j 7.0

k 8.0

d

l 10.0

10

c

5

b

0

a

0.0 1.0 2.0 3.0 4.0

V

6.0

VDS

Typ. transfer characteristics ID = f (VGS)

parameter: tp = 80 µs

VDS≥2 x ID x RDS(on)max

40

A

ID

30

25

20

15

10

5

0

0 1 2 3 4 5 6 7 8 V 10

VGS

Drain-source on-resistance

RDS (on) = ƒ(Tj)

parameter: ID = 14.5 A, VGS = 5 V

0.17

Ω

0.14

RDS (on)

0.12

0.10

0.08

98%

0.06

typ

0.04

0.02

0.00

-60 -20

20

60 100 °C 180

Tj

Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 µs,

VDS≥2 x ID x RDS(on)max

20

S

gfs

16

14

12

10

8

6

4

2

0

0 4 8 12 16 20 24 A 30

ID

Semiconductor Group

6

07/96

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