BUZ100SL View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BUZ100SL

SIPMOS®Power Transistor (P channel Enhancement mode Avalanche rated)

Siemens AG 

BUZ 100 SL

SPP70N05L

Typ. output characteristics

ID = ƒ(VDS)

parameter: tp = 80 µs

160

Ptot = 170W l k j i h

g

A

ID

120

100

80

60

40

VGS [V]

fa

2.5

b

3.0

c

3.5

d

4.0

ee

4.5

f

5.0

g

5.5

dh

6.0

i

6.5

j

7.0

k

8.0

c

l

10.0

20

b

0

a

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0

VDS

Typ. transfer characteristics ID = f (VGS)

parameter: tp = 80 µs

VDS≥2 x ID x RDS(on)max

300

Typ. drain-source on-resistance

RDS (on) = ƒ(ID)

parameter: tp = 80 µs, Tj = 25 °C

0.055

a

b

c

d

e

Ω

0.045

RDS (on)

0.040

0.035

0.030

0.025

0.020

0.015

0.010

f

g

hi

j

k

VGS [V] =

0.005 a b c d e f g h i j k

23.50 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0

0.000

0 20 40 60 80 100 A 140

ID

A

I

D

200

150

100

50

0

0 1 2 3 4 5 6 7 8 V 10

VGS

Semiconductor Group

6

30/Jan/1998

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