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Part Name
Description
BUZ100SE3045 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BUZ100SE3045
SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
Siemens AG
BUZ100SE3045 Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
BUZ 100SL
Avalanche Energy
E
AS
=
f
(
T
j
)
parameter:
I
D
= 70 A,
V
DD
= 25 V
R
GS
= 25
Ω
400
mJ
320
280
240
200
160
120
80
40
0
20
40
60
80 100 120 140
˚C
180
T
j
Drain-source breakdown voltage
V
(BR)DSS
=
f
(
T
j
)
Typ. gate charge
V
GS
=
f
(
Q
Gate
)
parameter:
I
D puls
= 70 A
BUZ100SL
16
V
12
10
8
0,2
V
DS max
6
0,8
V
DS max
4
2
0
0 20 40 60 80 100
nC
140
Q
Gate
BUZ100SL
66
V
64
62
60
58
56
54
52
50-60
-20
20
60 100 140
˚C
200
T
j
Data Sheet
8
05.99
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