Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Part Name
Description
BUZ100S View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BUZ100S
SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
Siemens AG
BUZ100S Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
BUZ 100SL
Power Dissipation
P
tot
=
f
(
T
C
)
BUZ100SL
180
W
140
120
100
80
60
40
20
0
0
20 40 60 80 100 120 140 160
˚C
190
T
C
Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
C
= 25 ˚C
10
3
BUZ100SL
A
t
p
= 34.0µs
Drain current
I
D
=
f
(
T
C
)
parameter:
V
GS
≥
10 V
BUZ100SL
75
A
60
55
50
45
40
35
30
25
20
15
10
5
0
0
20 40 60 80 100 120 140 160
˚C
190
T
C
Transient thermal impedance
Z
thJC
=
f
(
t
p
)
parameter :
D
=
t
p
/
T
10
1
BUZ100SL
K/W
10
0
10
2
100 µs
10
-1
10
1
10
0
10
-1
10
0
Data Sheet
1 ms
10 ms
DC
10
1
V
10
2
V
DS
5
10
-2
10
-3
10
-4
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-5
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
05.99
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]