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BUH50G View Datasheet(PDF) - ON Semiconductor

Part NameDescriptionManufacturer
BUH50G SWITCHMODE™ NPN Silicon Planar Power Transistor ON-Semiconductor
ON Semiconductor ON-Semiconductor
BUH50G Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
100
TJ = 125°C
TJ = 25°C
10
TJ = - 40°C
BUH50G
TYPICAL STATIC CHARACTERISTICS
100
VCE = 1 V
TJ = 125°C
TJ = 25°C
10
TJ = - 40°C
VCE = 5 V
1
0.01
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
1
0.01
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)
Figure 2. DC Current Gain @ 5 Volt
10
10
TJ = 25°C
IC/IB = 3
4A
3A
1
2A
1A
IC = 500 mA
0.1
0.01
0.1
1
10
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
1
TJ = - 40°C
0.1
TJ = 125°C
TJ = 25°C
0.01
0.01
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)
Figure 4. CollectorEmitter Saturation Voltage
10
IC/IB = 5
1
TJ = - 40°C
0.1
TJ = 125°C
TJ = 25°C
0.01
0.01
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)
Figure 5. CollectorEmitter Saturation Voltage
10
IC/IB = 3
1
TJ = 125°C
TJ = - 40°C
TJ = 25°C
0.1
0.01
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)
Figure 6. BaseEmitter Saturation Region
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