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BUH150G View Datasheet(PDF) - ON Semiconductor

Part NameBUH150G ON-Semiconductor
ON Semiconductor ON-Semiconductor
DescriptionSWITCHMODE NPN Silicon Planar Power Transistor
BUH150G Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
BUH150G
TYPICAL SWITCHING CHARACTERISTICS
2000
1800 IB1 = IB2
1600 VCC = 300 V
PW = 40 ms
1400
1200
125°C
IC/IB = 10
25°C
1000
125°C
800
600
400
200
0
0
25°C
IC/IB = 5
3
6
9
12
15
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Resistive Switching, ton
12
TJ = 25°C
IB1 = IB2
10
TJ = 125°C
VCC = 300 V
PW = 20 ms
8
6
IC/IB = 5
4
2
IC/IB = 10
0
0
5
10
15
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Resistive Switch Time, toff
8
7
IC/IB = 5
IB1 = IB2
VCC = 15 V
6
VZ = 300 V
LC = 200 mH
5
4
3
2
1
TJ = 125°C
TJ = 25°C
0
1
3
5
7
9
11
13
15
IC, COLLECTOR CURRENT (AMPS)
Figure 13. Inductive Storage Time, tsi
8
7
IC/IB = 10
IB1 = IB2
VCC = 15 V
6
VZ = 300 V
LC = 200 mH
5
4
3
2
1
TJ = 125°C
TJ = 25°C
0
1
4
7
10
IC, COLLECTOR CURRENT (AMPS)
Figure 13 Bis. Inductive Storage Time, tsi
550
IB1 = IB2
VCC = 15 V
450 VZ = 300 V
LC = 200 mH
350
TJ = 125°C
TJ = 25°C
tc
250
150
50
1
tfi
3
5
7
9
11
13
15
IC, COLLECTOR CURRENT (AMPS)
Figure 14. Inductive Storage Time,
tc & tfi @ IC/IB = 5
800
700
IB1 = IB2
VCC = 15 V
600 VZ = 300 V
LC = 200 mH
500
400
TC = 125°C
TC = 25°C
tc
300
tfi
200
100
0
0
2
4
6
8
10
IC, COLLECTOR CURRENT (AMPS)
Figure 15. Inductive Storage Time,
tc & tfi @ IC/IB = 10
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