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BU4522DF View Datasheet(PDF) - Philips Electronics

Part NameBU4522DF Philips
Philips Electronics Philips
DescriptionSilicon Diffused Power Transistor
BU4522DF Datasheet PDF : 4 Pages
1 2 3 4
Philips Semiconductors
Silicon Diffused Power Transistor
Objective specification
BU4522DF
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all R.H. 65 % ; clean and dustfree
three terminals to external
heatsink
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
- 2500 V
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 2
ICES
BVEBO
Rbe
VCEOsust
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
VF
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
IB = 600 mA
VEB = 7.5 V
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 7 A; IB = 1.75 A
IC = 7 A; IB = 1.75 A
IC = 1 A; VCE = 5 V
IC = 7 A; VCE = 5 V
IF = 7 A
MIN.
-
-
7.5
-
800
-
0.85
-
4.2
-
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
13.5 -
V
50
-
-
-
V
-
3.0
V
0.94 1.03 V
10
-
5.8 7.3
-
2.2
V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Switching times (16 kHz line
deflection circuit)
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (64 kHz line
deflection circuit)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
f = 16 kHz; ICsat = 7 A; IB1 = 1.4 A;
(IB2 = -3.5 A)
f = 64 kHz;
TYP. MAX. UNIT
3.5 4.3 µs
285 400 ns
t.b.f t.b.f µs
t.b.f t.b.f ns
2 Measured with half sine-wave voltage (curve tracer).
July 1998
2
Rev 1.000
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