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BU406FI View Datasheet(PDF) - Inchange Semiconductor

Part NameBU406FI Iscsemi
Inchange Semiconductor Iscsemi
DescriptionSilicon NPN Power Transistors
BU406FI Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BU406FI/407FI
DESCRIPTION
·High Voltage
·Fast Switching Speed-
: toff= 0.75μs (Max)
·Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 5A
APPLICATIONS
·Designed for use in converters, inverters, switching
regulators and motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter
Voltage
BU406FI
400
V
BU407FI
330
VCEO
Collector-Emitter
Voltage
BU406FI
200
V
BU407FI
150
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
15
A
IBB
Base Current-Continuous
4
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
Tstg
Storage Temperature Range
6
A
18
W
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
7 /W
Thermal Resistance,Junction to Ambient 55 /W
isc Websitewww.iscsemi.cn
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