BU406-A-T3P-T View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
| BU406-A-T3P-T Datasheet PDF : 0 Pages | |||
BU406
NPN PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage (IE=0)
VCBO
400
V
Collector-Emitter Voltage (VBE=-1.5V)
VCEV
400
V
Collector-Emitter Voltage (IB=0)
VCEO
200
V
Emitter-Base Voltage (IC=0)
VEBO
6
V
Collector Current
IC
7
A
Collector Peak Current (repetitive)
ICM
10
A
Collector Peak Current (tp=10ms)
ICM
15
A
Base Current
Collector Dissipation (TC≤25℃)
Junction Temperature
Storage Temperature
IB
4
A
PC
60
W
TJ
150
℃
TSTG
-65 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
Thermal Resistance, Junction to Ambient
θJA
Thermal Resistance, Junction to Case
θJC
ELECTRICAL CHARACTERISTICS (Ta=25℃)
RATINGS
70
2.08
UNIT
℃/W
℃ /W
PARAMETER
SYMBOL
TEST CONDITIONS
Collect Cutoff Current (VBE=0)
VCE=400V
ICES VCE=250V TC=150°C
VCE=250V
Emitter Cut-off Current (IC=0)
IEBO VBE=6V
Collector-Emitter Saturation Voltage VCE(SAT)* IC=5A, IB=0.5A
Base-Emitter Saturation Voltage
VBE(SAT)* IC=5A, IB=0.5A
DC Current Gain
hFE VCE=10V, IC=500mA
Transition Frequency
fT
IC=500mA, VCE=10V
Turn-off Time
tOFF IC=5A, IB=0.5A
Second Breakdown Collector Current
Is/b
* Pulse duration=300µs, duty cycle 1.5%
VCE=40V, t=10ms
CLASSIFICATION OF hFE
RANK
RANGE
A
70 ~ 120
MIN TYP MAX UNIT
5
mA
100 µA
1
mA
1
mA
1
V
1.2
V
70
240
10
MHz
0.75 µs
4
A
B
110 ~ 240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R203-021,D
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