BU2727A View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BU2727A Datasheet PDF : 7 Pages
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Philips Semiconductors
Silicon Diffused Power Transistor
Preliminary specification
BU2727A
hFE
100
VCE = 1 V
10
BU2727A/AF
Tmb = 25 C
Tmb = 85 C
1
0.01
0.1
1
10
100
IC / A
Fig.7. DC current gain. hFE = f (IC)
Parameter Tmb
(Low and high gain)
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.10. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Tmb)
VCEsat / V
10
Tmb = 85 C
Tmb = 25 C
1
IC/IB = 12
0.1
BU2727A/AF
IC/IB = 5
0.01
0.1
1
10
100
IC / A
Fig.8. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
Zth / (K/W)
10
BU2525A
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
PD
tp
D=
tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
T
t
1E+00
Fig.11. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
VBEsat / V
1
IC = 6 A
0.9
BU2727A/AF
0.8
4A
0.7
Tmb = 85 C
Tmb = 25 C
0.6
0
Fig.9.
1
2
3
4
IB / A
Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
September 1997
4
Rev 1.100
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