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BU2727A View Datasheet(PDF) - Philips Electronics

Part NameBU2727A Philips
Philips Electronics Philips
DescriptionSilicon Diffused Power Transistor
BU2727A Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Philips Semiconductors
Silicon Diffused Power Transistor
Preliminary specification
BU2727A
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection
circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to
1700V.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
ts
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
VBE = 0 V
Tmb 25 ˚C
IC = 5.0 A; IB = 0.91 A
ICM = 5.0 A; IB(end) = 0.9 A
TYP.
-
-
-
-
-
-
5.0
2.2
MAX.
1700
825
12
30
125
1.0
-
tbf
UNIT
V
V
A
A
W
V
A
µs
PINNING - SOT93
PIN
DESCRIPTION
1 base
2 collector
3 emitter
tab collector
PIN CONFIGURATION
tab
123
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Tmb 25 ˚C
ESD LIMITING VALUES
SYMBOL PARAMETER
CONDITIONS
VC
Electrostatic discharge capacitor voltage Human body model (250 pF,
1.5 k)
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1700
825
12
30
12
25
200
25
125
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
MIN. MAX. UNIT
-
10 kV
1 Turn-off current.
September 1997
1
Rev 1.100
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