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BU2725DX View Datasheet(PDF) - Philips Electronics

Part NameBU2725DX Philips
Philips Electronics Philips
DescriptionSilicon Diffused Power Transistor
BU2725DX Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2725DX
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal
deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
QUICK REFERENCE DATA
SYMBOL
VCESM
IC
ICM
Ptot
VCEsat
ICsat
ts
PARAMETER
Collector-emitter voltage peak value
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
VBE = 0 V
Ths 25 ˚C
IC = 7.0 A; IB = 1.75 A
f = 16 kHz
ICsat = 7.0 A; f = 16kHz
TYP.
-
-
-
-
-
7.0
5.8
MAX.
1700
12
30
45
1.0
-
6.5
UNIT
V
A
A
W
V
A
µs
PINNING - SOT399
PIN
DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
123
SYMBOL
c
b
Rbe
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths 25 ˚C
ESD LIMITING VALUES
SYMBOL PARAMETER
CONDITIONS
VC
Electrostatic discharge capacitor voltage Human body model (250 pF,
1.5 k)
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1700
12
30
12
20
200
9
45
150
150
UNIT
V
A
A
A
A
mA
A
W
˚C
˚C
MIN. MAX. UNIT
-
10 kV
1 Turn-off current.
August 2002
1
Rev 2.000
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