BU323Z View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
BU323Z Datasheet PDF : 6 Pages
| |||
IC
ICPEAK
(a)
IC
ICPEAK
BU323Z
IC HIGH
IC LOW
VCE
VGATE MIN
The shaded area represents the amount of energy the
device can sustain, under given DC biases (IC/IB/VBE(off)/
RBE), without an external clamp; see the test schematic dia-
gram, Figure 2.
The transistor PASSES the Energy test if, for the inductive
load and ICPEAK/IB/VBE(off) biases, the VCE remains outside
the shaded area and greater than the VGATE minimum limit,
Figure 4a.
IC HIGH
(b)
IC
ICPEAK
IC LOW
VCE
VGATE MIN
IC HIGH
The transistor FAILS if the VCE is less than the VGATE
(minimum limit) at any point along the VCE/IC curve as
shown on Figures 4b, and 4c. This assures that hot spots and
uncontrolled avalanche are not being generated in the die,
and the transistor is not damaged, thus enabling the sustained
energy level required.
(c)
IC
ICPEAK
IC LOW
VCE
VGATE MIN
IC HIGH
The transistor FAILS if its Collector/Emitter breakdown
voltage is less than the VGATE value, Figure 4d.
IC LOW
VCE
(d)
VGATE MIN
Figure 4. Energy Test Criteria for BU323Z
http://onsemi.com
4
|
|
Share Link: 