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BU2510-E3 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
Manufacturer
BU2510-E3
Vishay
Vishay Semiconductors Vishay
BU2510-E3 Datasheet PDF : 6 Pages
1 2 3 4 5 6
www.vishay.com
BU2506-E3, BU2508-E3, BU2510-E3
Vishay General Semiconductor
50
40
30
20
10
0
0
5
10
15
20
25
30
Average Forward Current (A)
Fig. 3 - Forward Power Dissipation
100
10
TJ = 150 °C
TJ = 125 °C
1
1000
100
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 25 °C
0.1
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Characteristics Per Diode
1000
100
0.1
TJ = 25 °C
0.01
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
Instantaneous Forward Voltage ( V )
Fig. 4 - Typical Forward Characteristics Per Diode
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance Per Diode
Revision: 16-Aug-13
3
Document Number: 84805
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 

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