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BU2010-M3/51 View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
Manufacturer
BU2010-M3/51
Vishay
Vishay Semiconductors Vishay
BU2010-M3/51 Datasheet PDF : 6 Pages
1 2 3 4 5 6
BU2006 thru BU2010
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Maximum instantaneous forward
voltage per diode (1)
IF = 10 A
TA = 25 °C
TA = 125 °C
VF
0.95
0.85
Maximum reverse current per diode
rated VR
TA = 25 °C
TA = 125 °C
IR
-
110
Typical junction capacitance per diode 4.0 V, 1 MHz
CJ
95
Note
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
MAX.
1.05
0.95
5.0
350
-
UNIT
V
µA
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BU2006
Typical thermal resistance
Rï±JC (1)
Rï±JA (2)
Notes
(1) With 60 W air cooled heatsink
(2) Without heatsink, free air
BU2008
2.4
20
BU2010
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
BU2006-M3/45
4.76
45
BU2006-M3/51
4.76
51
BU20065S-M3/45
4.76
45
BASE QUANTITY
20
250
20
DELIVERY MODE
Tube
Paper tray
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
24
20
16 With Heatsink
Sine-Wave, R-Load
12 TC Measured at Device Bottom
TC
TC
8
4
0
0
25
50
75
100
125
150
Case Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
5
4
3
2
Without Heatsink
1
Sine-Wave, R-Load
Free Air, TA
0
0
25
50
75
100
125
150
Ambient Temperature (°C)
Figure 2. Forward Current Derating Curve
www.vishay.com
For technical questions within your region, please contact one of the following: Document Number: 89298
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 15-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 

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