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BU2507DX View Datasheet(PDF) - Inchange Semiconductor

Part NameBU2507DX Iscsemi
Inchange Semiconductor Iscsemi
DescriptionSilicon NPN Power Transistor
BU2507DX Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Switching Speed
·High Voltage
·Built-in Ddamper Ddiode
APPLICATIONS
·Designed for use in horizontal deflection circuits of
coluor TV receivers and computer monitors.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
7.5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-peak
15
A
IBB
Base Current-Continuous
4
A
IBM
Base Current-peak
Collector Power Dissipation
PC
@TC=25
Tj
Junction Temperature
Tstg
Storage Temperature Range
6
A
45
W
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 2.8 K/W
isc Product Specification
BU2507DX
isc Websitewww.iscsemi.cn
Direct download click here

 

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