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BU2508D View Datasheet(PDF) - Inchange Semiconductor

Part NameBU2508D Iscsemi
Inchange Semiconductor Iscsemi
DescriptioniscSilicon NPN Power Transistor
BU2508D Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU2508D
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V (Min)
·High Switching Speed
·Built-in Damper Diode
APPLICATIONS
·Designed for use in horizontal deflection circuits of
color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage(VBE= 0) 1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
7.5
V
IC
Collector Current- Continuous
8
A
ICM
Collector Current-Peak
15
A
IBB
Base Current- Continuous
4
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
Tstg
Storage Temperature Range
6
A
125
W
150
-65~150
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case 1.0 /W
isc Websitewww.iscsemi.cn
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