Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2522A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
800
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
7.5 13.5
V
VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.76A
5.0
V
VBEsat Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=6A ;IB=1.76A
VCE=BVCES; VBE=0
Tj=125℃
VEB=7.5V; IC=0
1.3
V
0.25
2.0
mA
0.25 mA
hFE-1
DC current gain
固I电NC半H导A体NGE SEMICONDUCTOR hFE-2
DC current gain
CC
Collector capacitance
IC=1A ; VCE=5V
IC=6A ; VCE=5V
VCB=10V;IE=0;f=1.0MHz
8
10
21
5
7
8
115
pF
2