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Part Name  

BU2522A View Datasheet(PDF) - Inchange Semiconductor

Part NameBU2522A Iscsemi
Inchange Semiconductor Iscsemi
DescriptionSilicon NPN Power Transistors
BU2522A Datasheet PDF : 3 Pages
1 2 3
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2522A
DESCRIPTION
·With TO-3PN package
·High voltage
·High speed switching
APPLICATIONS
·For use in horizontal deflection circuits
of high resolution monitors.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25)
固I电NC半H导ANGE SEMICONDUCTOR SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
IC
Collector current (DC)
VALUE
1500
800
10
UNIT
V
V
A
ICM
Collector current-peak
25
A
IB
Base current (DC)
6
A
IBM
Base current-peak
9
A
Ptot
Total power dissipation
TC=25
125
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
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