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Part Name  

BU2520AF View Datasheet(PDF) - Inchange Semiconductor

Part NameBU2520AF Iscsemi
Inchange Semiconductor Iscsemi
DescriptionSilicon NPN Power Transistors
BU2520AF Datasheet PDF : 3 Pages
1 2 3
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2520AF
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
800
V
VEBO
Emitter-base breakdown voltage
IB=1mA ;IC=0
7.5
13.5
V
VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2 A
5.0
V
VBEsat Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=6A ;IB=1.2 A
VCE=BVCES; VBE=0
Tj=125
VEB=7.5V; IC=0
1.1
V
1.0
2.0
mA
1.0
mA
hFE-1
DC current gain
固I电NC半H导A体NGE SEMICONDUCTOR hFE-2
DC current gain
CC
Collector capacitance
IC=0.1A ; VCE=5V
IC=6A ; VCE=5V
IE=0; f=1MHz;VCB=10V
13
5
7
9.5
115
pF
2
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