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BU2522 View Datasheet(PDF) - Philips Electronics

Part NameBU2522 Philips
Philips Electronics Philips
DescriptionSilicon Diffused Power Transistor
BU2522 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2522A
VCESAT / V
10
Tj = 85 C
Tj = 25 C
1
IC/IB = 5
0.1
BU2522A
3
0.01
0.1
1
10
100
IC / A
Fig.9. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
VBESAT / V
1.2
Tj = 85 C
1.1
Tj = 25 C
BU2522A
1
0.9
0.8
IC =
7A
0.7
6A
5A
0.6
0
Fig.10.
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
IB / A
Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
Poff / W
100
BU2522AF
IC =
6A
10 5A
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
IB / A
Fig.11. Typical turn-off losses. Tj = 85˚C
Poff = f (IB); parameter IC; f = 64 kHz
ts, tf / us
4
BU2522AF
3.5
3
2.5
2
IC =
1.5
6A
1
5A
0.5
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
IB / A
Fig.12. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 64 kHz
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.13. Normalised power dissipation.
PD% = 100PD/PD 25˚C = f (Tmb)
10 Zth / (K/W)
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
PD
tp
D
=
tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
T
t
1E+00
Fig.14. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
November 1995
4
Rev 1.100
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