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BU2522 View Datasheet(PDF) - Philips Electronics

Part NameBU2522 Philips
Philips Electronics Philips
DescriptionSilicon Diffused Power Transistor
BU2522 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2522A
TRANSISTOR
IC
DIODE
I CM
t
IB
I B end
t
5 us
6.5 us
16 us
VCE
t
Fig.3. Switching times waveforms (64 kHz).
ICM
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.4. Switching times definitions.
+ 150 v nominal
adjust for ICM
Lc
IBend
-VBB
LB
T.U.T.
BY228
Cfb
Fig.5. Switching times test circuit.
VCC
IBend
-VBB
LC
LB
T.U.T.
VCL
CFB
Fig.6. Test Circuit RBSOA. VCC = 140 V; -VBB = 4 V;
LC = 100 - 400 µH; VCL 1500 V; LB = 3 µH;
CFB = 1 - 2.2 nF; IB(end) = 1.6 - 2 A
h FE
100
Tj = 85 C
Tj = 25 C
Tj = -40 C
BU2522A
10
1
0.01
Fig.7.
0.1
1
10
100
IC / A
Typical DC current gain. hFE = f (IC)
VCE = 5 V
VBESAT / V
1.2
1.1
Tj = 85 C
Tj = 25 C
1
BU2522A
0.9
0.8
0.7
IC/IB =
3
0.6
5
0.5
0.4
0.1
1
10
IC / A
Fig.8. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB
November 1995
3
Rev 1.100
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