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BU2522DF View Datasheet(PDF) - Philips Electronics

Part NameBU2522DF Philips
Philips Electronics Philips
DescriptionSilicon Diffused Power Transistor
BU2522DF Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2522DF
10 Zth / (K/W)
1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
PD
tp
D = tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
T
t
1E+00
Fig.13. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
IC / A
30
BU2522AF
20
10
0
0
500
1000
1500
VCE / V
Fig.14. Reverse bias safe operating area. Tj Tjmax
IC / A
100
ICM
ICDC
10
= 0.01
BU2520AF
tp =
30 us
100 us
Ptot
1
1 ms
0.1
10 ms
DC
0.01
1
10
100
1000 VCE / V
Fig.15. Forward bias safe operating area. Ths = 25 ˚C
ICDC & ICM = f(VCE); ICM single pulse; parameter tp
Second-breakdown limits independant of temperature.
Mounted with heatsink compound.
September 1997
5
Rev 1.200
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