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BU2522DF View Datasheet(PDF) - Philips Electronics

Part NameBU2522DF Philips
Philips Electronics Philips
DescriptionSilicon Diffused Power Transistor
BU2522DF Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2522DF
VCESAT / V
1.0
0.9
0.8
0.7
0.6
IC/IB =
5
4
3
0.5
Tj = 25 C
0.4
Tj = 125 C
0.3
0.2
0.1
0
0.1
1
10
100
IC / A
Fig.7. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
VBESAT / V
1.2
Tj = 25 C
1.1
Tj = 125 C
1.0
0.9
IC=
0.8
8A
0.7
0.6
0
Fig.8.
6A
5A
4A
1
2
3
4
IB / A
Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
VCESAT / V
10
Tj = 25 C
Tj = 125 C
8A
1
6A
5A
IC = 4 A
0.1
0.1
1
10
IB / A
Fig.9. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter IC
Poff / W
100
IC =
6A
10 5A
BU2522AF
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
IB / A
Fig.10. Typical turn-off losses. Tj = 85˚C
Poff = f (IB); parameter IC; f = 64 kHz
ts, tf / us
4
BU2522AF
3.5
3
2.5
2
IC =
1.5
6A
1
5A
0.5
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
IB / A
Fig.11. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 64 kHz
120 PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.12. Normalised power dissipation.
PD% = 100PD/PD 25˚C = f (Ths)
September 1997
4
Rev 1.200
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