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BU2508D View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
BU2508D
Philips
Philips Electronics Philips
BU2508D Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2508D
VBESAT / V
1.2
Tj = 25 C
1.1
Tj = 125 C
BU2508D
1
0.9
IC=
6A
0.8
4.5A
3A
0.7
2A
0.6
0
1
2
3
4
IB / A
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
VCESAT / V
10
6A
4.5A
1
BU2508D
Tj = 25 C
Tj = 125 C
3A
IC=2A
0.1
0.1
1
10
IB / A
Fig.8. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter IC
1000 Eoff / uJ
IC = 4.5A
3.5A
100
BU2508D
10
0.1
1
10
IB / A
Fig.9. Typical turn-off losses. Tj = 85˚C
Eoff = f (IB); parameter IC; f = 16 kHz
12 ts, tf / us
BU2508D
11
ts
10
9
8
7
6
5
IC =
4
3
4.5A
3.5A
2
1
tf
0
0.1
1
10
IB / A
Fig.10. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz
Zth / (K/W)
10
1
0.5
0.2
0.1
0.1 0.05
0.02
D=0
PD
tp
D
=
tp
T
0.01
1E-06
T
1E-04
1E-02
t/s
t
1E+00
Fig.11. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.12. Normalised power dissipation.
PD% = 100PD/PD 25˚C = f (Tmb)
December 1995
4
Rev 1.200
 

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