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BU2508D View Datasheet(PDF) - Philips Electronics

Part NameBU2508D Philips
Philips Electronics Philips
DescriptionSilicon Diffused Power Transistor
BU2508D Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2508D
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
VCEsat
ICsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0 V
Tmb 25 ˚C
IC = 4.5 A; IB = 1.29 A
IC = 4.5 A; IB = 1.1 A
IF = 4.5 A
ICM = 4.5 A; IB(end) = 1.1 A
TYP.
-
-
-
-
-
-
-
4.5
1.6
0.4
MAX.
1500
700
8
15
125
1.0
5.0
-
2.0
0.6
UNIT
V
V
A
A
W
V
V
A
V
µs
PINNING - SOT93
PIN
DESCRIPTION
1 base
2 collector
3 emitter
tab collector
PIN CONFIGURATION
tab
123
SYMBOL
c
b
Rbe
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Tmb 25 ˚C
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
8
15
4
6
100
5
125
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
1 Turn-off current.
December 1995
1
Rev 1.200
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