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Part Name  

BU109 View Datasheet(PDF) - Inchange Semiconductor

Part NameBU109 Iscsemi
Inchange Semiconductor Iscsemi
DescriptionSilicon NPN Power Transistor
BU109 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Excellent Safe Operating Area
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0 V(Max)@ IC = 5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 150 V(Min)
APPLICATIONS
·Designed for horizontal deflection output stage of TVs and
CRTs applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
330
V
VCEV
Collector-Emitter Voltage- VBE= -1.5V
330
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak(Repetitive)
10
A
ICM
Collector Current-Peak(t= 10ms)
15
A
IBB
Base Current
4
A
PC
Collector Power Dissipation@TC=25
60
W
TJ
Junction Temperature
150
Tstg
Storage Temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
2.08 /W
Thermal Resistance,Junction to Ambient 70 /W
isc Product Specification
BU109
isc Websitewww.iscsemi.cn
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