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Part Name  

BU108 View Datasheet(PDF) - Inchange Semiconductor

Part NameBU108 Iscsemi
Inchange Semiconductor Iscsemi
DescriptionSilicon NPN Power Transistor
BU108 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU108
DESCRIPTION
·High Voltage
·High Switching Speed
·Collector Current- IC = 5A
APPLICATIONS
·Designed for high voltage CRT scanning applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO Collector-Emitter Voltage
750
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
IBB
Base Current-Continuous
3.5
A
IE
Emitter Current-Continuous
PC
Collector Power Dissipation
@VCE100V,TC95
TJ
Junction Temperature
Tstg
Storage Temperature
8.5
A
12.5
W
115
-65~115
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.6 /W
isc Websitewww.iscsemi.cn
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