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BU104 View Datasheet(PDF) - Inchange Semiconductor

Part NameBU104 Iscsemi
Inchange Semiconductor Iscsemi
DescriptionSilicon NPN Power Transistor
BU104 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU104
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.)
·Low Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max.)@ IC= 7A
APPLICATIONS
·Designed for use in horizontal deflexion output stage of B/W
TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VCEX
Collector-Emitter Voltage VBE= -5V
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak Repetitive
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC= 25
TJ
Junction Temperature
Tstg
Storage Temperature Range
400
V
150
V
400
V
10
V
7
A
15
A
3
A
85
W
200
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
2.0 /W
isc Websitewww.iscsemi.cn
Direct download click here

 

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