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BU103A View Datasheet(PDF) - Inchange Semiconductor

Part NameBU103A Iscsemi
Inchange Semiconductor Iscsemi
DescriptionSilicon NPN Power Transistor
BU103A Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU103A
DESCRIPTION
·Continuous Collector Current-IC= 1A
·Collector Power Dissipation-
: PC= 30W @TC= 25
APPLICATIONS
·Designed for TV vertical applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
120
V
VCER
Collector-Emitter Voltage RBE= 220Ω
120
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
1
A
PC
Collector Power Dissipation@TC=25
30
W
TJ
Junction Temperature
200
Tstg
Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
6.0 /W
isc Websitewww.iscsemi.cn
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