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BTS6143D View Datasheet(PDF) - Infineon Technologies

Part NameBTS6143D Infineon
Infineon Technologies Infineon
DescriptionSmart Highside Power Switch
BTS6143D Datasheet PDF : 18 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
PROFET® BTS 6143 D
Reversave(Reverse battery protection)
-Vbb
R bb
IN
R IN
Logic
OUT
Power
Transistor
Vbb disconnect with energised inductive
load
Provide a current path with load current capability by
using a diode, a Z-diode, or a varistor. (VZL+VD<39 V if
RIN = 0). For higher clamp voltages currents at IN and
IS have to be limited to 120 mA.
Version a:
Vbb
V bb
D
R IS
Signal GND
RL
Power GND
RIS typ. 1 k. Add RIN for reverse battery protection in
applications with Vbb above 16V;
recommended value:
1
RIN
+
1
RIS
=
0.08 A
| Vbb | 12V
IN PROFET OUT
IS
VD
VZL
To minimise power dissipation at reverse battery
operation, the overall current into the IN and IS pin
should be about 80mA. The current can be provided by
using a small signal diode D in parallel to the input
switch, by using a MOSFET input switch or by proper
adjusting the current through RIS.
Since the current via Rbb generates additional heat in
the device, this has to be taken into account in the
overall thermal consideration.
Inverse load current operation
Vbb
+
Vbb
- IL
IN PROFET OUT
-
VIN
IS
IIS
VIS
R IS
VOUT +
-
The device can be operated in inverse load current
mode (VOUT > Vbb > 0V). The current sense feature is
not available during this kind of operation (IIS = 0). In
case of inverse operation the intrinsic drain source
diode is eventually conducting resulting in considerably
increased power dissipation.
The transition from inverse to forward mode can result
in a delayed switch on.
Note: Temperature protection during inverse load
current operation is not possible!
Data Sheet
10 of 18
Rev. 1.0, 2007-02
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