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BTS6510 View Datasheet(PDF) - Infineon Technologies

Part NameBTS6510 Infineon
Infineon Technologies Infineon
DescriptionSmart Highside High Current Power Switch
BTS6510 Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Data Sheet BTS6510
Overvoltage protection of logic part
+ Vbb
R IN IN
VZ,IN VZ,IS
R bb
Logic
IS
PROFET
VOUT
R IS
RV
V Z,VIS
Signal GND
Rbb = 120 typ., VZ,IN = VZ,IS = 66 V typ., RIS = 1 k
nominal. Note that when overvoltage exceeds 71 V typ.
a voltage above 5V can occur between IS and GND, if
RV, VZ,VIS are not used.
Reverse battery protection
- Vbb
Rbb
Vbb disconnect with energized inductive
load
Provide a current path with load current capability by
using a diode, a Z-diode, or a varistor. (VZL < 72 V or
VZb < 30 V if RIN=0). For higher clamp voltages
currents at IN and IS have to be limited to 250 mA.
Version a:
Vbb
V bb
IN
PROFET OUT
IS
VZL
Version b:
IN
Vbb
Vbb
RIN
Logic
OUT
Power
Transistor
IN PROFET OUT
IS
IS
DS
RL
VZb
D
RIS
RV
Signal GND
Power GND
RV 1 kΩ, RIS = 1 knominal. Add RIN for reverse
battery protection in applications with Vbb above
16
V18);
recommended
value:
1
RIN
+
1
RIS
+
1
RV
=
0.1A
1
0.1A
|Vbb| - 12V if DS is not used (or RIN = |Vbb| - 12V if DS is
used).
To minimize power dissipation at reverse battery
operation, the summarized current into the IN and IS
pin should be about 120mA. The current can be
provided by using a small signal diode D in parallel to
the input switch, by using a MOSFET input switch or by
proper adjusting the current through RIS and RV.
Note that there is no reverse battery protection when
using a diode without additional Z-diode VZL, VZb.
Version c: Sometimes a neccessary voltage clamp is
given by non inductive loads RL connected to the same
switch and eliminates the need of clamping circuit:
Vbb
Vbb
RL
IN PROFET OUT
IS
Infineon Technologies AG
Page 8 of 15
2000-Mar-29
Direct download click here

 

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