BTS6510B View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BTS6510B

Smart Highside High Current Power Switch

Infineon Technologies 

Data Sheet BTS6510

Terms

VbIN

Vbb

RIN

VIN

I IN

I bb

4

Vbb

IN

OUT

3

PROFET

VON

IL

1,2,6,7

VbIS

VIS

IS

5 I IS

DS

R IS

VOUT

Two or more devices can easily be connected in

parallel to increase load current capability.

Input circuit (ESD protection)

V bb

Current sense status output

Vbb

R bb

ZD

IIS

V

Z,IS

IS

VIS

R IS

VZ,IS = 66 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n

devices are connected in parallel). IS = IL/kilis can be

driven only by the internal circuit as long as Vout - VIS >

5 V. If you want measure load currents up to IL(M), RIS

should

be

less

than

Vbb

IL(M)

-

/

5V

Kilis.

Note: For large values of RIS the voltage VIS can reach

almost Vbb. See also overvoltage protection.

If you don't use the current sense output in your

application, you can leave it open.

V

ZD

Z,IN

V bIN

IN

IIN

R bb

Inductive and overvoltage output clamp

+ Vbb

VZ1

VON

V IN

When the device is switched off (IIN = 0) the voltage

between IN and GND reaches almost Vbb. Use a

mechanical switch, a bipolar or MOS transistor with

appropriate breakdown voltage as driver.

VZ,IN = 66 V (typ).

VZG

IS

DS

OUT

PROFET

VOUT

VON is clamped to VON(Cl) = 42 V typ. At inductive load

switch-off without DS, VOUT is clamped to VOUT(CL) =

-19 V typ. via VZG. With DS, VOUT is clamped to Vbb -

VON(CL) via VZ1. Using DS gives faster deenergizing of

the inductive load, but higher peak power dissipation in

the PROFET. In case of a floating ground with a

potential higher than 19V referring to the OUT –

potential the device will switch on, if diode DS is not

used.

Infineon Technologies AG

Page 7 of 15

2000-Mar-29

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