BTW68N-1000 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
BTW68N-1000 Datasheet PDF : 5 Pages
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BTW 68 (N)
THERMAL RESISTANCES
Symbol
Rth (j-a) Junction to ambient
Rth (j-c) DC Junction to case for DC
Parameter
BTW 68
BTW 68 N
Value
50
1.1
0.8
Unit
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W PGM = 40W (tp = 20 µs) IFGM = 8A (tp = 20 µs) VRGM = 5 V.
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
IGT
VGT
VGD
tgt
IL
IH
VTM
IDRM
IRRM
dV/dt
tq
VD=12V (DC) RL=33Ω
VD=12V (DC) RL=33Ω
VD=VDRM RL=3.3kΩ
VD=VDRM IG = 200mA
dIG/dt = 1.5A/µs
IG= 1.2 IGT
IT= 500mA gate open
Tj=25°C
Tj=25°C
Tj= 125°C
Tj=25°C
Tj=25°C
Tj=25°C
BTW 68 ITM= 60A
BTW 68 N ITM= 70A
VDRM Rated
VRRM Rated
tp= 380µs
Tj=25°C
Tj=25°C
Tj= 125°C
Linear slope up to
VD=67%VDRM
gate open
VDRM≤ 800V Tj= 125°C
VDRM ≥ 1000V
VD=67%VDRM ITM= 60A VR= 75V
dITM/dt=30 A/µs dVD/dt= 20V/µs
Tj= 125°C
MAX
MAX
MIN
TYP
TYP
MAX
MAX
MAX
MIN
TYP
Value
Unit
BTW 68 BTW 68 N
50
mA
1.5
V
0.2
V
2
µs
40
mA
75
mA
2.1
2.2
V
0.02
mA
6
500
V/µs
250
100
µs
2/5
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