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BTW67-1200 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
BTW67-1200
ST-Microelectronics
STMicroelectronics ST-Microelectronics
BTW67-1200 Datasheet PDF : 6 Pages
1 2 3 4 5 6
BTW67 and BTW69 Series
Figure 3: Relative variation of thermal
impedance versus pulse duration
Figure 4: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature
K=[Zth/Rth]
1E+0
1E-1
Zth(j-c)
1E-2
Zth(j-a)
BTW69
1E-3
1E-3
1E-2
tp(s)
1E-1
1E+0
1E+1
1E+2 5E+2
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.5
2.0
1.5
1.0
IH & IL
0.5
0.0
-40 -20
0
IGT
Tj(°C)
20
40
60
80 100 120 140
Figure 5: Surge peak on-state current versus
number of cycles
Figure 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t
ITSM(A)
600
550
500
450
400
350
300
250
Repetitive
TC=75°C
200
150
100
50
0
1
Non repetitive
Tj initial=25°C
Number of cycles
10
100
tp=10ms
One cycle
1000
ITSM(A), I2t (A2s)
5000
1000
ITSM
Tj initial = 25°C
I2t
100
0.01
dI/dt limitation
tp(ms)
0.10
1.00
10.00
Figure 7: On-state characteristics (maximum
values)
ITM(A)
600
Tj max.:
Vt0=1.0V
Rd=8.5m
100
Tj=max
10
Tj=25°C
VTM(V)
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
3/6
 

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