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BTW67-800 View Datasheet(PDF) - STMicroelectronics

Part NameBTW67-800 ST-Microelectronics
STMicroelectronics ST-Microelectronics
Description50A SCRS
BTW67-800 Datasheet PDF : 6 Pages
1 2 3 4 5 6
®
BTW67 and BTW69 Series
STANDARD
50A SCRS
Table 1: Main Features
Symbol
Value
IT(RMS)
50
VDRM/VRRM
600 to 1200
IGT
80
Unit
A
V
mA
DESCRIPTION
Available in high power packages, the BTW67 /
BTW69 Series is suitable in applications where
power handling and power dissipation are critical,
such as solid state relays, welding equipment,
high power motor control.
Based on a clip assembly technology, they offer a
superior performance in surge current handling
capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation (2500VRMS), complying
with UL standards (file ref: E81734).
A
G
K
K
G
A
RD91
(BTW67)
K
A
G
TOP3 Ins.
(BTW69)
Table 2: Order Codes
Part Numbers
BTW67-xxx
BTW69-xxxRG
Marking
BTW67xxx
BTW69xxx
Table 3: Absolute Ratings (limiting values)
Symbol
IT(RMS)
RMS on-state current
(180° conduction angle)
Parameter
RD91
TOP3 Ins.
IT(AV)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
VRGM
Average on-state current
(180° conduction angle)
RD91
TOP3 Ins.
tp = 8.3 ms
Non repetitive surge peak on-state current
tp = 10 ms
I²t Value for fusing
Critical rate of rise of on-state current IG = 2
x IGT , tr 100 ns
F = 60 Hz
Peak gate current
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
Tc = 70°C
Tc = 75°C
Tc = 70°C
Tc = 75°C
Tj = 25°C
Tj = 25°C
Value
50
32
610
580
1680
Tj = 125°C
50
Tj = 125°C
8
Tj = 125°C
1
- 40 to + 150
- 40 to + 125
5
Unit
A
A
A
A2S
A/µs
A
W
°C
V
February 2006
REV. 5
1/6
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