BTW69XXX View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
BTW69XXX Datasheet PDF : 6 Pages
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BTW67 and BTW69 Series
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
IGT
VD = 12 V
VGT
RL = 33 Ω
MIN.
MAX.
MAX.
VGD VD = VDRM RL = 3.3 kΩ
Tj = 125°C MIN.
IH IT = 500 mA Gate open
MAX.
IL
IG = 1.2 x IGT
MAX.
dV/dt VD = 67 % VDRM Gate open
Tj = 125°C MIN.
VTM ITM = 100 A tp = 380 µs
Tj = 25°C
MAX.
Vt0 Threshold voltage
Tj = 125°C MAX.
Rd Dynamic resistance
Tj = 125°C MAX.
IDRM
IRRM
VDRM = VRRM
Tj = 25°C
Tj = 125°C
MAX.
Value
8
80
1.3
0.2
150
200
1000
1.9
1.0
8.5
10
5
Unit
mA
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
Table 5: Thermal resistance
Symbol
Parameter
Rth(j-c) Junction to case (D.C.)
Rth(j-a) Junction to ambient (D.C.)
RD91 (Insulated)
TOP3 Insulated
TOP3 Insulated
Value
1.0
0.9
50
Unit
°C/W
°C/W
Figure 1: Maximum average power dissipation
versus average on-state current
Figure 2: Average and D.C. on-state current
versus case temperature
P(W)
55
50
α = 180°
45
40
35
30
25
20
15
10
5
0
0
5
IT(AV)(A)
10
15
20
360°
α
25
30
35
IT(AV)(A)
60
D.C.
50
40
α = 180°
30
20
10
0
0
25
BTW67
BTW69
BTW69
BTW67
Tcase(°C)
50
75
100
125
2/6
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