Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1706AB
IC / A
10 ICM
I CDC
1
Ptot
tp =
0.1
100 us
1 ms
10 ms
DC
0.01
1
10 VCE / V 100
1000
Fig.15. Forward bias safe operating area. Tmb = 25 ˚C
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of the
envelope.
IC / A
6
BU1706A
5
4
3
2
1
0
0
400
800
1200
VCE / V
1600
2000
Fig.16. Reverse bias safe operating area. Tj ≤ Tjmax
February 1998
5
Rev 1.000