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BU1706AB View Datasheet(PDF) - Philips Electronics

Part NameBU1706AB Philips
Philips Electronics Philips
DescriptionSilicon Diffused Power Transistor
BU1706AB Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1706AB
GENERAL DESCRIPTION
High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for
use in high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
VBE = 0 V
Tmb 25 ˚C
IC = 1.5 A; IB = 0.3 A
ICM = 1.5 A; IB(on) = 0.3 A
TYP.
-
-
-
-
-
-
1.5
0.25
MAX.
1750
850
5
8
100
1.0
-
0.6
UNIT
V
V
A
A
W
V
A
µs
PINNING - SOT404
PIN
DESCRIPTION
1 base
2 collector
3 emitter
mb collector
PIN CONFIGURATION
mb
2
13
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20ms period
Tmb 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to mounting
base
Thermal resistance junction to ambient
CONDITIONS
minimum footprint, FR4 board
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1750
850
5
8
3
5
100
4
100
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP. MAX. UNIT
- 1.25 K/W
55
- K/W
February 1998
1
Rev 1.000
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