BTS117TC View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BTS117TC Datasheet PDF : 11 Pages
| |||
Smart Low Side Power Switch
HITFET BTS 117TC
Electrical Characteristics
Parameter
at Tj=25°C, unless otherwise specified
Characteristics
Initial peak short circuit current limit
VIN = 10 V, VDS = 12 V
Current limit 1)
VIN = 10 V, VDS = 12 V, tm = 350 μs,
Tj = -40...+150 °C
Dynamic Characteristics
Turn-on time VIN to 90% ID:
RL = 4.7 Ω, VIN = 0 to 10 V, Vbb = 12 V
Turn-off time VIN to 10% ID:
RL = 4.7 Ω, VIN = 10 to 0 V, Vbb = 12 V
Slew rate on
70 to 50% Vbb:
RL = 4.7 Ω, VIN = 0 to 10 V, Vbb = 12 V
Slew rate off
50 to 70% Vbb:
RL = 4.7 Ω, VIN = 10 to 0 V, Vbb = 12 V
Protection Functions 2)
Thermal overload trip temperature
Unclamped single pulse inductive energy
ID = 3.5 A, Tj = 25 °C, Vbb = 32 V
ID = 3.5 A, Tj = 150 °C, Vbb = 32 V
Inverse Diode
Inverse diode forward voltage
IF = 5*3.5A, tm = 300 μS, VIN = 0 V
Symbol
Values
Unit
min. typ. max.
ID(SCp)
-
25
-A
ID(lim)
7
10
15
ton
-
toff
-
-dVDS/dton
-
dVDS/dtoff
-
40
70 μs
70 150
1
3 V/μs
1
3
Tjt
EAS
VSD
150 165
1000 --
225
--
- °C
mJ
--
--
-
1
-V
1Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 μs.
2Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
Datasheet
4
Rev. 1.0, 2009-07-20
|
|
Share Link: 