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Q67060-S6101-A3 View Datasheet(PDF) - Siemens AG

Part NameQ67060-S6101-A3 Siemens
Siemens AG Siemens
DescriptionSmart Highside Power Switch
Q67060-S6101-A3 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical Characteristics
Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
BTS 410 D2
Symbol
Values
Unit
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 1.6 A
Tj=25 °C: RON
Tj=150 °C:
Nominal load current, ISO Norm (pin 3 to 5)
VON = 0.5 V, TC = 85 °C
Output current (pin 5) while GND disconnected or
GND pulled up, Vbb=30 V, VIN= 0, see diagram
page 7, Tj =-40...+150°C
Turn-on time
IN to 90% VOUT:
Turn-off time
IN to 10% VOUT:
RL = 12 , Tj =-40...+150°C
Slew rate on
10 to 30% VOUT, RL = 12 , Tj =-40...+150°C
Slew rate off
70 to 40% VOUT, RL = 12 , Tj =-40...+150°C
IL(ISO)
IL(GNDhigh)
ton
toff
dV /dton
-dV/dtoff
-- 190 220 m
390 440
1.6 1.8
--
--
-- A
1 mA
12
-- 125 µs
5
-- 85
--
--
3 V/µs
--
--
6 V/µs
Operating Parameters
Operating voltage 6)
Tj =-40...+150°C: Vbb(on)
4.7
-- 42 V
Undervoltage shutdown
Tj =25°C: Vbb(under)
2.9
-- 4.5 V
Tj =-40...+150°C:
2.7
-- 4.7
Undervoltage restart
Tj =-40...+150°C: Vbb(u rst)
--
-- 4.9 V
Undervoltage restart of charge pump
see diagram page 12
Vbb(ucp)
-- 5.6 6.0 V
Undervoltage hysteresis
Vbb(under) = Vbb(u rst) - Vbb(under)
Vbb(under)
-- 0.1
-- V
Overvoltage shutdown
Tj =-40...+150°C: Vbb(over)
42
-- 52 V
Overvoltage restart
Tj =-40...+150°C: Vbb(o rst)
40
--
-- V
Overvoltage hysteresis
Overvoltage protection7)
Ibb=4 mA
Tj =-40...+150°C: Vbb(over)
Tj =-40...+150°C: Vbb(AZ)
-- 0.1
65 70
-- V
-- V
Standby current (pin 3)
VIN=0, IST0,
Tj=-40...+25°C: Ibb(off)
Tj= 150°C:
-- 10 15 µA
-- 18 25
Leakage output current (included in Ibb(off))
VIN=0
IL(off)
--
-- 20 µA
Operating current (Pin 1)8), VIN=5 V,
Tj =-40...+150°C
IGND
--
1 2.1 mA
6) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V
7) Meassured without load. See also VON(CL) in table of protection functions and circuit diagram page 7.
Semiconductor Group
3
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