BTA16-700BW View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

BTA16-700BW

16A TRIACS

STMicroelectronics 

BTA16, BTB16 and T16 Series

Table 3: Absolute Maximum Ratings

Symbol

Parameter

IT(RMS)

RMS on-state current (full sine

wave)

D2PAK /

TO-220AB

TO-220AB Ins.

ITSM

Non repetitive surge peak on-state F = 50 Hz

current (full cycle, Tj initial = 25°C) F = 60 Hz

I²t

dI/dt

I²t Value for fusing

Critical rate of rise of on-state cur-

rent IG = 2 x IGT , tr ≤ 100 ns

tp = 10 ms

F = 120 Hz

VDSM/VRSM

Non repetitive surge peak off-state

voltage

tp = 10 ms

IGM

PG(AV)

Tstg

Tj

Peak gate current

Average gate power dissipation

tp = 20 µs

Storage junction temperature range

Operating junction temperature range

Value

Unit

Tc = 100°C

16

A

Tc = 15°C

t = 20 ms

160

A

t = 16.7 ms

168

144

A²s

Tj = 125°C

50

A/µs

Tj = 25°C

VDSM/VRSM

+ 100

V

Tj = 125°C

4

A

Tj = 125°C

1

W

- 40 to + 150

- 40 to + 125

°C

Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)

■ SNUBBERLESS and Logic Level (3 quadrants)

Symbol

Test Conditions

Quadrant

T16

BTA16 / BTB16

Unit

T1635 SW CW BW

IGT (1)

VGT

VD = 12 V RL = 33 Ω

I - II - III MAX. 35

I - II - III MAX.

10 35

1.3

50 mA

V

VGD

VD = VDRM RL = 3.3 kΩ

Tj = 125°C

I - II - III MIN.

0.2

V

IH (2) IT = 500 mA

MAX. 35 15 35 50 mA

IL

IG = 1.2 IGT

I - III

50 25 50 70

MAX.

mA

II

60 30 60 80

dV/dt (2) VD = 67 %VDRM gate open

Tj = 125°C MIN. 500 40 500 1000 V/µs

(dV/dt)c = 0.1 V/µs

Tj = 125°C

-

8.5

-

-

(dI/dt)c (2) (dV/dt)c = 10 V/µs

Tj = 125°C MIN. -

3.0

-

- A/ms

Without snubber

Tj = 125°C

8.5

-

8.5 14

2/9

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