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BTB12-800BW3G View Datasheet(PDF) - ON Semiconductor

Part NameBTB12-800BW3G ON-Semiconductor
ON Semiconductor ON-Semiconductor
DescriptionTriacs Silicon Bidirectional Thyristors
BTB12-800BW3G Datasheet PDF : 6 Pages
1 2 3 4 5 6
BTB12-600BW3G, BTB12-800BW3G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction-to-Case
Junction-to-Ambient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 seconds
Symbol
RqJC
RqJA
TL
Value
2.3
60
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol Min
Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
IDRM/
TJ = 25°C
IRRM
-
-
TJ = 125°C
-
-
ON CHARACTERISTICS
Peak On‐State Voltage (Note 2)
(ITM = ±ā17 A Peak)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
VTM
-
-
IGT
2.5
-
2.5
-
2.5
-
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±100 mA)
Latching Current (VD = 24 V, IG = 60 mA)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
IH
-
-
IL
-
-
-
-
-
-
Gate Trigger Voltage (VD = 12 V, RL = 30 W)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
VGT
0.5
-
0.5
-
0.5
-
Gate Non-Trigger Voltage (TJ = 125°C)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
VGD
0.2
-
0.2
-
0.2
-
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 125°C, No Snubber)
Critical Rate of Rise of On-State Current
(TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr 100 ns)
Critical Rate of Rise of Off‐State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
(dI/dt)c
4.0
-
dI/dt
-
-
dV/dt
2000
-
Max Unit
mA
0.005
1.0
1.55
V
mA
50
50
50
50
mA
mA
70
90
70
V
1.7
1.1
1.1
V
-
-
-
-
A/ms
50
A/ms
-
V/ms
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