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BTB12-600BW3G View Datasheet(PDF) - ON Semiconductor

Part NameBTB12-600BW3G ON-Semiconductor
ON Semiconductor ON-Semiconductor
DescriptionTriacs Silicon Bidirectional Thyristors
BTB12-600BW3G Datasheet PDF : 6 Pages
1 2 3 4 5 6
BTB12-600BW3G,
BTB12-800BW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full‐wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
ăBlocking Voltage to 800 V
ăOn‐State Current Rating of 12 Amperes RMS at 25°C
ăUniform Gate Trigger Currents in Three Quadrants
ăHigh Immunity to dV/dt - 2000 V/ms minimum at 125°C
ăMinimizes Snubber Networks for Protection
ăIndustry Standard TO‐220AB Package
ăHigh Commutating dI/dt - 4 A/ms minimum at 125°C
ăThese are Pb-Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off-State Voltage (Note 1) VDRM,
V
(TJ = -40 to 125°C, Sine Wave,
VRRM
50 to 60 Hz, Gate Open)
BTB12-600BW3G
600
BTB12-800BW3G
800
On‐State RMS Current
IT(RMS)
12
A
(Full Cycle Sine Wave, 60 Hz, TC = 80°C)
Peak Non‐Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TC = 25°C)
Circuit Fusing Consideration (t = 10 ms)
ITSM
I2t
120
A
78
A2sec
Non-Repetitive Surge Peak Off-State
Voltage (TJ = 25°C, t = 10ms)
VDSM/ VDSM/VRSM
V
VRSM
+100
Peak Gate Current (TJ = 125°C, t = 20ms) IGM
4.0
A
Peak Gate Power
(Pulse Width 1.0 ms, TC = 80°C)
PGM
20
W
Average Gate Power (TJ = 125°C)
PG(AV)
1.0
W
Operating Junction Temperature Range
TJ
-ā40 to +125 °C
Storage Temperature Range
Tstg -ā40 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
4
MARKING
DIAGRAM
1
23
x
A
Y
WW
G
TO-220AB
CASE 221A
STYLE 4
BTB12-xBWG
AYWW
= 6 or 8
= Assembly Location
= Year
= Work Week
= Pb-Free Package
PIN ASSIGNMENT
1
Main Terminal 1
2
Main Terminal 2
3
Gate
4
Main Terminal 2
ORDERING INFORMATION
Device
Package
BTB12-600BW3G TO-220AB
(Pb-Free)
Shipping
50 Units / Rail
BTB12-800BW3G TO-220AB 50 Units / Rail
(Pb-Free)
©Ă Semiconductor Components Industries, LLC, 2008
February, 2008 - Rev. 1
*For additional information on our Pb-Free strategy and
soldering details, please download the ON Semicon‐
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
1
Publication Order Number:
BTB12-600BW3/D
Direct download click here
 
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